NCEP0225G Datasheet | NCE Power Semiconductor

http://.ncepower. NCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high - VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for - Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification. - Very low on-resistance RDS(on) Application - 150 °C operating temperature - DC/DC Converter - Ideal for high-frequency rectification switching...