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NCEP0225G - N-Channel Super Trench Power MOSFET

General Description

The NCEP0225G uses Super Trench technology that is General

Key Features

  • uniquely optimized to provide the most efficient high.
  • VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for.
  • Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification.
  • Very low on-resistance RDS(on).

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Datasheet Details

Part number NCEP0225G
Manufacturer NCE Power Semiconductor
File Size 382.47 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP0225G Datasheet

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http://www.ncepower.com NCEP0225G NCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high ● VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ● Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification.