NCEP026N10M Datasheet - NCE Power Semiconductor

N-Channel Super Trench II Power MOSFET

NCEP026N10M Features

* VDS =100V,ID =200A RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

NCEP026N10M General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP026N10M Datasheet (348.91 KB)

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NCEP026N10M

Manufacturer:

NCE Power Semiconductor

File Size:

348.91 KB

Description:

N-channel super trench ii power mosfet.

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NCEP026N10M N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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NCEP026N10M Features

NCEP026N10M General Description

Datasheet Details

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