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NCEP026N10T

N-Channel Super Trench II Power MOSFET

NCEP026N10T Features

* VDS =100V,ID =230A RDS(ON)=2.15mΩ , typical@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering

NCEP026N10T General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP026N10T Datasheet (325.88 KB)

Preview of NCEP026N10T PDF

Datasheet Details

Part number:

NCEP026N10T

Manufacturer:

NCE Power Semiconductor

File Size:

325.88 KB

Description:

N-channel super trench ii power mosfet.

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NCEP026N10T N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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