NCEP026N10T Datasheet (NCE Power Semiconductor) - N-Channel Super Trench II Power MOSFET

NCEP026N10T, N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency

NCEP026N10T Features

* VDS =100V,ID =230A RDS(ON)=2.15mΩ , typical@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-247 Schematic Diagram Package Marking and Ordering