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NCEP026N10MD

N-Channel Super Trench II Power MOSFET

NCEP026N10MD Features

* VDS =100V,ID =200A RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

NCEP026N10MD General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP026N10MD Datasheet (348.91 KB)

Preview of NCEP026N10MD PDF

Datasheet Details

Part number:

NCEP026N10MD

Manufacturer:

NCE Power Semiconductor

File Size:

348.91 KB

Description:

N-channel super trench ii power mosfet.

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NCEP026N10MD N-Channel Super Trench Power MOSFET NCE Power Semiconductor

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