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NCEP026N10MD, NCEP026N10M N-Channel Super Trench II Power MOSFET

NCEP026N10MD Description

NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

NCEP026N10MD Features

* VDS =100V,ID =200A RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

📥 Download Datasheet

This datasheet PDF includes multiple part numbers: NCEP026N10MD, NCEP026N10M. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
NCEP026N10MD, NCEP026N10M
Manufacturer
NCE Power Semiconductor
File Size
348.91 KB
Datasheet
NCEP026N10M-NCEPowerSemiconductor.pdf
Description
N-Channel Super Trench II Power MOSFET
Note
This datasheet PDF includes multiple part numbers: NCEP026N10MD, NCEP026N10M.
Please refer to the document for exact specifications by model.

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N-Channel Super Trench Power MOSFET NCE Power Semiconductor
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