Description
NCEP026N10M, NCEP026N10MD NCE N-Channel Super Trench II Power MOSFET .
The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Features
* VDS =100V,ID =200A
RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V
RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V
* Excellent gate charge x RDS(on) product(FOM)
* Very low on-resistance RDS(on)
* 175 °C operating temperature
* Pb-free lead plating
100% UIS TESTED! 100% ∆Vds TESTED!
TO-22