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NCEP026N10MD, NCEP026N10M Datasheet - NCE Power Semiconductor

NCEP026N10MD N-Channel Super Trench II Power MOSFET

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency.

NCEP026N10MD Features

* VDS =100V,ID =200A RDS(ON)=2.4mΩ , typical (TO-220)@ VGS=10V RDS(ON)=2.2mΩ , typical (TO-263)@ VGS=10V

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 175 °C operating temperature

* Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-22

NCEP026N10M-NCEPowerSemiconductor.pdf

NCEP026N10MD Datasheet Preview — This datasheet PDF includes multiple part numbers: NCEP026N10MD, NCEP026N10M. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

NCEP026N10MD, NCEP026N10M

Manufacturer:

NCE Power Semiconductor

File Size:

348.91 KB

Description:

N-channel super trench ii power mosfet.

Note:

This datasheet PDF includes multiple part numbers: NCEP026N10MD, NCEP026N10M.
Please refer to the document for exact specifications by model.

NCEP026N10MD Distributor

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NCEP026N10MD NCEP026N10M N-Channel Super Trench Power MOSFET NCE Power Semiconductor