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NCE Power Semiconductor

NCEP12T13A Datasheet Preview

NCEP12T13A Datasheet

N-Channel Super Trench Power MOSFET

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http://www.ncepower.com
Pb Free Product
NCEP12T13A
NCE N-Channel Super Trench Power MOSFET
Description
The NCEP12T13A uses Super Trench technology that is
uniquely optimized to provide the most efficient high
frequency switching performance. Both conduction and
switching power losses are minimized due to an extremely
low combination of RDS(ON) and Qg. This device is ideal for
high-frequency switching and synchronous rectification.
Schematic diagram
General Features
VDS =120V,ID =130A
RDS(ON) <4.6m@ VGS=10V
Excellent gate charge x RDS(on) product
Very low on-resistance RDS(on)
175 °C operating temperature
Pb-free lead plating
100% UIS tested
Marking and pin assignment
Application
DC/DC Converter
Ideal for high-frequency switching and synchronous
rectification
100% UIS TESTED!
100% Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
NCEP12T13A
NCEP12T13A
TO-220-3L
-
-
Absolute Maximum Ratings (TC=25unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
120
±20
Drain Current-Continuous (Silicon Limited)
ID 143
Drain Current-Continuous (Package Limited)
ID 135
Drain Current-Continuous(TC=100)
Pulsed Drain Current
Maximum Power Dissipation
Derating factor
Single pulse avalanche energy (Note 5)
Operating Junction and Storage Temperature Range
ID (100)
IDM
PD
EAS
TJ,TSTG
102
500
210
1.4
1050
-55 To 175
Quantity
-
Unit
V
V
A
A
A
A
W
W/
mJ
Wuxi NCE Power Co., Ltd
Page 1
V1.0




NCE Power Semiconductor

NCEP12T13A Datasheet Preview

NCEP12T13A Datasheet

N-Channel Super Trench Power MOSFET

No Preview Available !

http://www.ncepower.com
Thermal Characteristic
Thermal Resistance,Junction-to-Case(Note 2)
RθJC
Electrical Characteristics (TC=25unless otherwise noted)
Parameter
Symbol
Condition
Off Characteristics
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
On Characteristics (Note 3)
BVDSS
IDSS
IGSS
VGS=0V ID=250μA
VDS=120V,VGS=0V
VGS=±20V,VDS=0V
Gate Threshold Voltage
Drain-Source On-State Resistance
Forward Transconductance
Dynamic Characteristics (Note4)
VGS(th)
RDS(ON)
gFS
VDS=VGS,ID=250μA
VGS=10V, ID=60A
VDS=10V,ID=60A
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics (Note 4)
Clss
Coss
Crss
VDS=50V,VGS=0V,
F=1.0MHz
Turn-on Delay Time
Turn-on Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDD=60V,ID=60A
VGS=10V,RG=4.7
VDS=60V,ID=60A,
VGS=10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current (Note 2)
Reverse Recovery Time
Reverse Recovery Charge
VSD VGS=0V,IS=135A
IS
trr TJ = 25°C, IF = IS
Qrr di/dt = 100A/μs(Note3)
Pb Free Product
NCEP12T13A
0.71 /W
Min Typ Max Unit
120
--
--
-
1
±100
V
μA
nA
2.5
- 3.8
- 60
4.5
4.6
-
V
m
S
- 6400
- 731
- 35
-
-
-
PF
PF
PF
- 19
- 76
- 48
- 14
- 92
- 35.4
- 18.8
-
-
-
-
nS
nS
nS
nS
nC
nC
nC
- 1.2
- - 135
- 63
- 142
V
A
nS
nC
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t 10 sec.
3. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
4. Guaranteed by design, not subject to production
5. EAS condition : Tj=25,VDD=50V,VG=10V,L=0.5mH,Rg=25
Wuxi NCE Power Co., Ltd
Page 2
V1.0


Part Number NCEP12T13A
Description N-Channel Super Trench Power MOSFET
Maker NCE Power Semiconductor
Total Page 7 Pages
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