NCEP12T12 Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Super Trench Power MOSFET Description The NCEP12T12 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =120V,ID =129A RDS(ON) <6.8mΩ @ VGS=10V - Excellent gate charge x RDS(on) product - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Schematic diagram Marking and pin assignment Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! 100% ∆Vds TESTED! TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape...