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NCEP12T13A Datasheet

Manufacturer: NCE Power Semiconductor
NCEP12T13A datasheet preview

Datasheet Details

Part number NCEP12T13A
Datasheet NCEP12T13A-NCEPowerSemiconductor.pdf
File Size 338.76 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Super Trench Power MOSFET
NCEP12T13A page 2 NCEP12T13A page 3

NCEP12T13A Overview

The NCEP12T13A uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP12T13A Key Features

  • VDS =120V,ID =130A RDS(ON) <4.6mΩ @ VGS=10V
  • Excellent gate charge x RDS(on) product
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
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NCEP12T13A Distributor

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