NCEP30T12G Datasheet - NCE Power Semiconductor

N-Channel Power MOSFET

NCEP30T12G Features

* VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested A

NCEP30T12G General Description

The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP30T12G Datasheet (369.14 KB)

NCEP30T12G Datasheet Preview — Preview of NCEP30T12G PDF

Datasheet Details

Part number:

NCEP30T12G

Manufacturer:

NCE Power Semiconductor

File Size:

369.14 KB

Description:

N-channel power mosfet.

📁 Related Datasheet

NCEP30T15GU N-Channel Power MOSFET (NCE Power Semiconductor)

NCEP30T17G N-Channel Power MOSFET (NCE Power Semiconductor)

NCEP30T17GU N-Channel Power MOSFET (NCE Power Semiconductor)

NCEP30T19G N-Channel Power MOSFET (NCE Power Semiconductor)

NCEP30T21GU N-Channel Power MOSFET (NCE Power Semiconductor)

NCEP3060EQ N-Channel Power MOSFET (NCE Power Semiconductor)

NCEP3065QU N-Channel Super Trench I Power MOSFET (NCE Power Semiconductor)

NCEP3085EG N-Channel Power MOSFET (NCE Power Semiconductor)

NCEP0109AR N-Channel Super Trench Power MOSFET (NCE Power Semiconductor)

NCEP0112AS N-Channel Super Trench Power MOSFET (NCE Power Semiconductor)

TAGS

NCEP30T12G N-Channel Power MOSFET NCE Power Semiconductor

Image Gallery

NCEP30T12G Features

NCEP30T12G General Description

Datasheet Details

File Size:

Description:

NCEP30T12G Distributor