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NCEP30T17GU

Manufacturer: NCE Power Semiconductor

NCEP30T17GU datasheet by NCE Power Semiconductor.

NCEP30T17GU datasheet preview

NCEP30T17GU Datasheet Details

Part number NCEP30T17GU
Datasheet NCEP30T17GU-NCEPowerSemiconductor.pdf
File Size 347.73 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP30T17GU page 2 NCEP30T17GU page 3

NCEP30T17GU Overview

The NCEP30T17GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP30T17GU Key Features

  • VDS =30V,ID =170A RDS(ON)=0.97mΩ (typical) @ VGS=10V RDS(ON)=1.25mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
NCE Power Semiconductor logo - Manufacturer

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NCEP30T17GU Distributor

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