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NCEP30T12G

Manufacturer: NCE Power Semiconductor

NCEP30T12G datasheet by NCE Power Semiconductor.

NCEP30T12G datasheet preview

NCEP30T12G Datasheet Details

Part number NCEP30T12G
Datasheet NCEP30T12G-NCEPowerSemiconductor.pdf
File Size 369.14 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP30T12G page 2 NCEP30T12G page 3

NCEP30T12G Overview

The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP30T12G Key Features

  • VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter
  • Ideal for high-frequency switching and synchronous
NCE Power Semiconductor logo - Manufacturer

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NCEP30T12G Distributor

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