NCEP30T12G - N-Channel Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCEP30T12G
Manufacturer	NCE Power Semiconductor
File Size	369.14 KB
Description	N-Channel Power MOSFET
Datasheet	NCEP30T12G Datasheet
Additional preview pages of the NCEP30T12G datasheet.

The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jun 2, 2018 |