Part NCEP30T12G
Description N-Channel Power MOSFET
Category MOSFET
Manufacturer NCE Power Semiconductor
Size 369.14 KB
NCE Power Semiconductor

NCEP30T12G Overview

Description

The NCEP30T12G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =30V,ID =120A RDS(ON)=1.95mΩ (typical) @ VGS=10V RDS(ON)=2.85mΩ (typical) @ VGS=4.5V DDDD DDDD
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested

Price & Availability

Seller Inventory Price Breaks Buy
No distributor offers were returned for this part.