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NCEP30T15GU - N-Channel Power MOSFET

General Description

frequency switching performance.

low combination of RDS(ON) and Qg.

Key Features

  • VDS =30V,ID =150A RDS(ON)=1.5mΩ (typical) @ VGS=10V RDS(ON)=2.0mΩ (typical) @ VGS=4.5V Schematic Diagram Only D D D D DDDD.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating Use.
  • 100% UIS tested mes.

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Datasheet Details

Part number NCEP30T15GU
Manufacturer NCE Power Semiconductor
File Size 353.54 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP30T15GU Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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http://www.ncepower.com Pb Free Product NCEP30T15GU NCE N-Channel Super Trench Power MOSFET Description The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =30V,ID =150A RDS(ON)=1.5mΩ (typical) @ VGS=10V RDS(ON)=2.0mΩ (typical) @ VGS=4.