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NCEP30T15GU

Manufacturer: NCE Power Semiconductor

NCEP30T15GU datasheet by NCE Power Semiconductor.

NCEP30T15GU datasheet preview

NCEP30T15GU Datasheet Details

Part number NCEP30T15GU
Datasheet NCEP30T15GU-NCEPowerSemiconductor.pdf
File Size 353.54 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP30T15GU page 2 NCEP30T15GU page 3

NCEP30T15GU Overview

The NCEP30T15GU uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP30T15GU Key Features

  • VDS =30V,ID =150A RDS(ON)=1.5mΩ (typical) @ VGS=10V RDS(ON)=2.0mΩ (typical) @ VGS=4.5V
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 150 °C operating temperature
  • Pb-free lead plating
  • 100% UIS tested
  • DC/DC Converter t
  • Ideal for high-frequency switching and synchronous g rectification
  • Tape width
  • Quantity
NCE Power Semiconductor logo - Manufacturer

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NCEP30T15GU Distributor

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