NCEP30T19G - N-Channel Power MOSFET

Product Overview

NCE Power Semiconductor

Part number	NCEP30T19G
Manufacturer	NCE Power Semiconductor
File Size	363.77 KB
Description	N-Channel Power MOSFET
Datasheet	NCEP30T19G Datasheet
Additional preview pages of the NCEP30T19G datasheet.

The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =30V,ID =185A RDS(ON)=1.1mΩ (typical) @ VGS=10V RDS(ON)=1.45mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jun 2, 2018 |