NCEP30T19G Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N-Channel Super Trench Power MOSFET Description The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =30V,ID =185A RDS(ON)=1.1mΩ (typical) @ VGS=10V RDS(ON)=1.45mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 150 °C operating temperature - Pb-free...