Datasheet Details
| Part number | NCEP30T19G |
|---|---|
| Manufacturer | NCE Power Semiconductor |
| File Size | 363.77 KB |
| Description | N-Channel Power MOSFET |
| Datasheet |
 NCEP30T19G Datasheet
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General Description
The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.
Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.
Key Features
- VDS =30V,ID =185A RDS(ON)=1.1mΩ (typical) @ VGS=10V RDS(ON)=1.45mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD.
- Excellent gate charge x RDS(on) product(FOM).
- Very low on-resistance RDS(on).
- 150 °C operating temperature.
- Pb-free lead plating.
- 100% UIS tested.