NCEP30T19G Datasheet - NCE Power Semiconductor

N-Channel Power MOSFET

NCEP30T19G Features

* VDS =30V,ID =185A RDS(ON)=1.1mΩ (typical) @ VGS=10V RDS(ON)=1.45mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested Ap

NCEP30T19G General Description

The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP30T19G Datasheet (363.77 KB)

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Datasheet Details

Part number:

NCEP30T19G

Manufacturer:

NCE Power Semiconductor

File Size:

363.77 KB

Description:

N-channel power mosfet.

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NCEP30T19G N-Channel Power MOSFET NCE Power Semiconductor

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NCEP30T19G Features

NCEP30T19G General Description

Datasheet Details

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Description:

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