NCEP30T19G - N-Channel Power MOSFET

NCE Power Semiconductor

Datasheet Details

Part number	NCEP30T19G
Manufacturer	NCE Power Semiconductor
File Size	363.77 KB
Description	N-Channel Power MOSFET
Datasheet	NCEP30T19G-NCEPowerSemiconductor.pdf

The NCEP30T19G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

VDS =30V,ID =185A RDS(ON)=1.1mΩ (typical) @ VGS=10V RDS(ON)=1.45mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

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Published: Jun 2, 2018 |