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NCEP40T17G - N-Channel Power MOSFET

General Description

The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Key Features

  • VDS =40V,ID =170A RDS(ON)=1.25mΩ (typical) @ VGS=10V RDS(ON)=1.55mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 150 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet Details

Part number NCEP40T17G
Manufacturer NCE Power Semiconductor
File Size 369.29 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP40T17G Datasheet

Full PDF Text Transcription for NCEP40T17G (Reference)

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http://www.ncepower.com Pb Free Product NCEP40T17G NCE N-Channel Super Trench Power MOSFET Description The NCEP40T17G uses Super Trench technology that is uniquely optimi...

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on The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features ● VDS =40V,ID =170A RDS(ON)=1.25mΩ (typical) @ VGS=10V RDS(ON)=1.55mΩ (typical) @ VGS=4.