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NCEP40T17G Datasheet - NCE Power Semiconductor

NCEP40T17G N-Channel Power MOSFET

The NCEP40T17G uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching.

NCEP40T17G Features

* VDS =40V,ID =170A RDS(ON)=1.25mΩ (typical) @ VGS=10V RDS(ON)=1.55mΩ (typical) @ VGS=4.5V Schematic Diagram DDDD DDDD

* Excellent gate charge x RDS(on) product(FOM)

* Very low on-resistance RDS(on)

* 150 °C operating temperature

* Pb-free lead plating

* 100% UIS tested A

NCEP40T17G-NCEPowerSemiconductor.pdf

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Datasheet Details

Part number:

NCEP40T17G

Manufacturer:

NCE Power Semiconductor

File Size:

369.29 KB

Description:

N-channel power mosfet.

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NCEP40T17G NCEP40T17G N-Channel Power MOSFET NCE Power Semiconductor

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