2SB1432 Datasheet - NEC

PNP SILICON EPITAXIAL TRANSISTOR

2SB1432 Features

* High hFE due to Darlington connection hFE ≥ 1,000 @VCE =

* 2.0 V, IC =

* 10 A)

* Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Parameter Collector to base voltage Collector to emitter voltage Emitte

2SB1432 General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full r.

2SB1432 Datasheet (103.38 KB)

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Datasheet Details

Part number:

2SB1432

Manufacturer:

NEC

File Size:

103.38 KB

Description:

Pnp silicon epitaxial transistor.
DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED .

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2SB1432 PNP SILICON EPITAXIAL TRANSISTOR NEC

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2SB1432 Features

2SB1432 General Description

Datasheet Details

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