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2SD596A - NPN Silicon Transistor

Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Features

  • Complementary to NEC 2SB624 PNP Transistor.
  • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA).

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Datasheet Details

Part number 2SD596A
Manufacturer NEC
File Size 556.80 KB
Description NPN Silicon Transistor
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Full PDF Text Transcription

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DATA SHEET SILICON TRANSISTOR 2SD596A www.DataSheet4U.com AUDIO FREQUENCY POWER AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR MINI MOLD FEATURES • Complementary to NEC 2SB624 PNP Transistor. • High DC Current Gain: hFE = 200 TYP. (VCE = 1.0 V, IC = 100 mA) PACKAGE DRAWING (Unit: mm) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current (DC) Total Power Dissipation Junction Temperature Storage Temperature Range VCBO 30 V VCEO 25 V VEBO 5.
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