2SJ494 mosfet equivalent, p-channel mosfet.
* Super Low On-State Resistance RDS(on)1 = 50 m: Max. (VGS =
–10 V, ID =
–10 A) RDS(on)2 = 88 m: Max. (VGS =
–4 V, ID .
PACKAGE DIMENSIONS (in millimeter)
10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2
15.0±0.3
3±0.1 4±0.2
FEATURES
* Super Low O.
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
PACKAGE DIMENSIONS (in millimeter)
10.0±0.3 4.5±0.2 3.2±0.2 2.7±0.2
15.0±0.3
3±0.1 4±0.2
FEATURES
* Super Low On-State Resistance RDS(on)1.
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