2SJ493 Key Features
- Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = -10 V, ID = -8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = -4 V, ID
- Low Ciss: Ciss = 1210 pF (TYP.)
- Built-in gate protection diode
| Part Number | Description |
|---|---|
| 2SJ492 | P-Channel MOSFET |
| 2SJ494 | P-Channel MOSFET |
| 2SJ495 | P-Channel MOSFET |
| 2SJ411 | P-Channel MOSFET |
| 2SJ448 | P-Channel MOSFET |