2SJ493 mosfet equivalent, p-channel mosfet.
* Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS =
–10 V, ID =
–8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS =
–4 V.
FEATURES
* Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS =
–10 V, ID =
&nb.
This product is P-Channel MOS Field Effect Transistor designed for high current switching applications.
FEATURES
* Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS =
–10 V, ID =
–8 A) RDS(on)2 = 185 mΩ .
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