2SJ493 Datasheet | NEC

DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES - Super low on-state resistance RDS(on)1 = 100 mΩ (MAX.) (VGS = - 10 V, ID = - 8 A) RDS(on)2 = 185 mΩ (MAX.) (VGS = - 4 V, ID = - 8 A) - Low Ciss: Ciss = 1210 p F (TYP.) - Built-in gate protection diode ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note2 Note1 VDSS VGSS(AC) VGSS(DC) ID(DC) ID(pulse) PT PT Tch Tstg - 60 # 20 V V V A A W W °C °C A m J - 20, 0 # 16 # 64 Total Power Dissipation (TC = 25°C) Total Power Dissipation (TA = 25°C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Note3 Note3 30 2.0 150 - 55 to +150 - 16 25.6 IAS EAS Notes 1. f = 20 k Hz, Duty Cycle ≤ 10% (+Side) 2. PW ≤ 10 µs, Duty Cycle ≤ 1 % 3. Starting Tch = 25 °C, RA = 25 Ω, VGS = - 20 V ¡ 0 THERMAL RESISTANCE Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 4.17 62.5 °C/W °C/W The information in this document is subject to change without notice. Document No. D11265EJ3V0DS00 (3rd edition) Date Published January 1999 NS CP(K) Printed in Japan © ELECTRICAL CHARACTERISTICS (TA = 25 °C) CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VGS = - 10 V, ID = - 8 A VGS = - 4 V, ID = - 8 A VDS = - 10 V, ID = - 1 m A VDS...