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2SJ598 Datasheet

Manufacturer: NEC (now Renesas Electronics)

2SJ598 datasheet preview

Datasheet Details

Part number	2SJ598
Datasheet	2SJ598_NEC.pdf
File Size	157.83 KB
Manufacturer	NEC (now Renesas Electronics)
Description	P-Channel MOSFET

2SJ598 Overview

The 2SJ598 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver.

2SJ598 Key Features

Low on-state resistance: RDS(on)1 = 130 mΩ MAX. (VGS = -10 V, ID = -6 A) RDS(on)2 = 190 mΩ MAX. (VGS = -4.0 V, ID = -6 A
Low Ciss: Ciss = 720 pF TYP
Built-in gate protection diode
TO-251/TO-252 package

2SJ598 from other manufacturers

See all manufacturers

Brand Logo	Part Number	Description	Other Manufacturers
	2SJ598	P-Channel MOSFET	INCHANGE
	2SJ598	MOS Field Effect Transistor	Kexin
	2SJ598	60V P-Channel MOSFET	VBsemi
	2SJ598-Z	P-Channel MOSFET	Kexin
	2SJ598-ZK	P-Channel Power MOSFET	Renesas

More Datasheets from NEC (now Renesas Electronics)

See all NEC (now Renesas Electronics) datasheets

Part Number	Description
2SJ599	P-Channel MOSFET
2SJ557	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
2SJ559	P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
2SJ132	MOS FIELD EFFECT POWER TRANSISTORS
2SJ132-Z	MOS FIELD EFFECT POWER TRANSISTORS
2SJ133	P-Channel Power MOSFET
2SJ133-Z	P-Channel Power MOSFET
2SJ134	P-Channel MOSFET
2SJ135	P-Channel MOSFET
2SJ138	P-Channel MOSFET

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