Full PDF Text Transcription for 2SJ601 (Reference)
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2SJ601. For precise diagrams, and layout, please refer to the original PDF.
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ601 SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor...
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AL USE DESCRIPTION The 2SJ601 is P-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low on-state resistance: RDS(on)1 = 31 mΩ MAX. (VGS = –10 V, ID = –18 A) RDS(on)2 = 46 mΩ MAX. (VGS = –4.0 V, ID = –18 A) • Low Ciss: Ciss = 3300 pF TYP. • Built-in gate protection diode • TO-251/TO-252 package ORDERING INFORMATION PART NUMBER PACKAGE 2SJ601 TO-251 2SJ601-Z TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) VDSS –60 V www.DataSheet4U.
2SJ601 Datasheet
