* Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS =
  –10 V, ID =
  –33 A) RDS(on)2 = 31 mΩ MAX. (VGS =
  –4.0 V, .

ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEAT.

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote FEATURES
* Super low on-state.

2SJ600

2SJ601

2SJ602

2SJ603

2SJ604

2SJ606

2SJ607

2SJ608

2SJ609

2SJ610

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