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2SJ605

Manufacturer: NEC (now Renesas Electronics)
2SJ605 datasheet preview

Datasheet Details

Part number 2SJ605
Datasheet 2SJ605_NEC.pdf
File Size 120.10 KB
Manufacturer NEC (now Renesas Electronics)
Description MOS FIELD EFFECT TRANSISTOR
2SJ605 page 2 2SJ605 page 3

2SJ605 Overview

The 2SJ605 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ605 2SJ605-S 2SJ605-ZJ 2SJ605-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote.

2SJ605 Key Features

  • Super low on-state resistance: RDS(on)1 = 20 mΩ MAX. (VGS = -10 V, ID = -33 A) RDS(on)2 = 31 mΩ MAX. (VGS = -4.0 V, ID =
  • Low input capacitance ! Ciss = 4600 pF TYP. (VDS = -10 V, VGS = 0 A)
  • Built-in gate protection diode

2SJ605 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
Kexin Logo 2SJ605 MOS Field Effect Transistors Kexin
VBsemi Logo 2SJ605 60V P-Channel MOSFET VBsemi
Kexin Logo 2SJ605-ZJ P-Channel MOSFET Kexin
NEC (now Renesas Electronics) logo - Manufacturer

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