* Super low on-state resistance: RDS(on)1 = 11 mΩ MAX. (VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX. (VGS = −4.0 V, ID = −42 A)
* Low input capacitance: Ciss = .

ORDERING INFORMATION PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEA.

The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES
* Super low on-stat.

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