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2SJ647 - MOS FIELD EFFECT TRANSISTOR

General Description

The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source.

Key Features

  • a low on-state resistance and excellent switching characteristics, and is suitable for.

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Full PDF Text Transcription for 2SJ647 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for 2SJ647. For precise diagrams, and layout, please refer to the original PDF.

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SJ647 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING DESCRIPTION The 2SJ647 is a switching device which can be driven directl...

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SCRIPTION The 2SJ647 is a switching device which can be driven directly by a 2.5 V power source. The 2SJ647 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on. PACKAGE DRAWING (Unit: mm) 0.3 +0.1 –0 2.1 ± 0.1 1.25 ± 0.1 0.65 FEATURES • 2.5 V drive available • Low on-state resistance RDS(on)1 = 1.45 Ω MAX. (VGS = −4.5 V, ID = −0.2 A) RDS(on)2 = 1.55 Ω MAX. (VGS = −4.0 V, ID = −0.2 A) RDS(on)3 = 2.98 Ω MAX. (VGS = −2.5 V, ID = −0.15 A) 2.0 ± 0.2 2 0.65 1 3 0.3 Marking 0.15 +0.1 –0.05 0.9 ± 0.1 0.3 +0.1 –0 ORDERING INF

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