* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A) 1.0 15.7 MAX. 4 3.2±0.2 1 2 3 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate.

PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 FEATURES
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.

The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 FEATURES
* Low On-Resistance RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A) 1.0 15.7 MAX. 4 3.2.

2SK2480

2SK2481

2SK2483

2SK2485

2SK2486

2SK2487

2SK2488

2SK2489

2SK240

2SK2400

2SK2401

2SK2402

2SK2405