2SK2482
DESCRIPTION
The 2SK2482 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter)
4.7 MAX. 1.5
FEATURES
- Low On-Resistance
RDS (on) = 4.0 Ω (VGS = 10 V, ID = 3.0 A)
15.7 MAX. 4
3.2±0.2
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)- Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current-
- Single Avalanche Energy-
- - PW ≤ 10 µs, Duty Cycle ≤ 1 % VDSS VGSS ID (DC) ID (pulse) PT1 PT2 Tch Tstg IAS EAS 900 ± 30 ± 5.0 ± 12 100 3.0 150 5.0 73.5 V V A A W W ˚C A m J
19 MIN. 3.0±0.2
2.2±0.2 5.45
1.0±0.2 5.45
4.5±0.2
- Low Ciss Ciss = 900 p F TYP.
- High Avalanche Capability Ratings
20.0±0.2 6.0
0.6±0.1
2.8±0.1
1. Gate 2. Drain 3. Source 4. Fin (Drain)
MP-88
Drain
- 55 to +150 ˚C
- - Starting Tch = 25 ˚C, RG = 25 Ω, VGS = 20 V →...
