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2SK2483 - N-Channel MOSFET

General Description

The 2SK2483 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications.

Key Features

  • Low On-Resistance RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2483 is N-Channel MOS Field Effect Transistor designed for high voltage switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES • Low On-Resistance RDS (on) = 2.8 Ω (VGS = 10 V, ID = 2.0 A) 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 15.0±0.3 3±0.1 4±0.2 ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* Total Power Dissipation (Tc = 25 ˚C) Total Power Dissipation (TA = 25 ˚C) Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW ≤ 10 µs, Duty Cycle ≤ 1 % G VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg IAS EAS = 25 Ω, VGS = 20 V → 0 ± 30 ± 3.5 ± 10.