2SK2510 fet equivalent, switching n-channel power mos fet.
* Super Low On-Resistance RDS (on)1 = 20 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 mΩ (VGS = 4 V, ID = 20 A)
15.0±0.3
10.0±0.3
3.2±0.2
4.5±0.2 2.7±0.2
3±0.1 4±0.2.
PACKAGE DIMENSIONS (in millimeter)
FEATURES
* Super Low On-Resistance RDS (on)1 = 20 mΩ (VGS = 10 V, ID = 20 A) RD.
The 2SK2510 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter)
FEATURES
* Super Low On-Resistance RDS (on)1 = 20 mΩ (VGS = 10 V, ID = 20 A) RDS (on)2 = 30 mΩ (VGS = 4 V, .
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