* Super Low On-Resistance
RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A)
1.0
15.7 MAX. 4
3.2±0.2
20.0±0.2 6.0
* Low Ciss .
PACKAGE DIMENSIONS (in millimeter)
4.7 MAX. 1.5
7.0
FEATURES
* Super Low On-Resistance
RDS (on)1 = 9 mΩ (VGS = 10.
The 2SK2515 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter)
4.7 MAX. 1.5
7.0
FEATURES
* Super Low On-Resistance
RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 = 1.
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