2SK2515 Datasheet, FET, NEC

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2SK2515 Features and benefits

* Super Low On-Resistance RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 = 14 mΩ (VGS = 4 V, ID = 25 A) 1.0 15.7 MAX. 4 3.2±0.2 20.0±0.2 6.0
* Low Ciss .

2SK2515 Application

PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 FEATURES
* Super Low On-Resistance RDS (on)1 = 9 mΩ (VGS = 10.

2SK2515 Description

The 2SK2515 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) 4.7 MAX. 1.5 7.0 FEATURES
* Super Low On-Resistance RDS (on)1 = 9 mΩ (VGS = 10 V, ID = 25 A) RDS (on)2 = 1.

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