* Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 23 A) 15.0±0.3 10.0±0.3 3.2±0.2 4.5±0.2 2.7±0.2 3±0.1 4±0.2
.

PACKAGE DIMENSIONS (in millimeter) FEATURES
* Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on).

The 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications. PACKAGE DIMENSIONS (in millimeter) FEATURES
* Low On-Resistance RDS (on)1 = 15 mΩ (VGS = 10 V, ID = 23 A) RDS (on)2 = 23 mΩ (VGS = 4 V, ID = 2.

2SK2510

2SK2511

2SK2514

2SK2515

2SK2516-01L

2SK2516-01S

2SK2517-01L

2SK2517-01S

2SK2518-01MR

2SK2519-01

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