2SK3359 datasheet, mosfet equivalent, NEC

Features and benefits

* Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) 5 5 RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
* Low Ciss: Ciss = 4900 pF TYP.
* B.

Application

FEATURES
* Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) 5 5 RDS(on)2 = 28 mΩ MAX. (VGS = .

Description

The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications. FEATURES
* Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) 5 5 RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
* Low .

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