* Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) 5 5 RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
* Low Ciss: Ciss = 4900 pF TYP.
* Built-in gate protection diode (TO-220AB) ABSOLUTE MAXIMUM RATINGS (TA = 25 °C) Drain to Source Voltage (VGS = 0 V) G
2SK3359
NEC
48.34 KB
N-channel mosfet.
PRELIMINARY DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3359 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION PART NUMBER 2SK3359.
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