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  NEC Electronic Components Datasheet  

2SK3503 Datasheet

N-Channel MOSFET

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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it can be
www.DataSheet4Ud.rcivoemn by a voltage as low as 1.5 V and it is not necessary to consider
a drive current, this FET is ideal as an actuator for low-current portable
systems such as headphone stereos and video cameras.
FEATURES
Automatic mounting supported
Gate can be driven by a 1.5 V power source
Because of its high input impedance, there’s no need to
consider a drive current
Since bias resistance can be omitted, the number of
components required can be reduced
ORDERING INFORMATION
PART NUMBER
2SK3503
Marking: E1
PACKAGE
SC-75 (USM)
PACKAGE DRAWING (Unit: mm)
0.3
+0.1
–0
0.15
+0.1
–0.05
3
2
0.2
+0.1
–0
1
0.5 0.5
1.0
1.6 ± 0.1
0 to 0.1
0.6
0.75 ± 0.05
1: Source
2: Gate
3: Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
16
Gate to Source Voltage (VDS = 0 V)
VGSS
±7.0
Drain Current (DC) (Tc = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C) Note2
ID(DC)
ID(pulse)
PT
±0.1
±0.4
200
Channel Temperature
Tch 150
Storage Temperature
Tstg –55 to +150
V
V
A
A
mW
°C
°C
Notes 1. PW 10 µs, Duty Cycle 1%
2. Mounted on ceramic substrate of 3.0 cm2 × 0.64 mm
EQUIVALENT CIRCUIT
Drain
Gate
Body
Diode
Gate
Protection
Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15395EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.
2001


  NEC Electronic Components Datasheet  

2SK3503 Datasheet

N-Channel MOSFET

No Preview Available !

ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
Zero Gate Voltage Drain Current
IDSS VDS = 16 V, VGS = 0 V
Gate Leakage Current
IGSS VGS = ±7.0 V, VDS = 0 V
Gate Cut-off Voltage
Forward Transfer Admittance Note
Drain to Source On-state Resistance Note
VGS(off)
| yfs |
RDS(on)1
VDS = 3.0 V, ID = 10 µA
VDS = 3.0 V, ID = 10 mA
VGS = 1.5 V, ID = 1.0 mA
RDS(on)2 VGS = 2.5 V, ID = 10 mA
RDS(on)3 VGS = 4.0 V, ID = 10 mA
Input Capacitance
www.DataSheet4U.com
Output Capacitance
Ciss
Coss
VGS = 0 V
VDS = 3.0 V
Reverse Transfer Capacitance
Crss f = 1 MHz
Turn-on Delay Time
td(on)
VDD = 3.0 V, ID = 10 mA
Rise Time
tr VGS = 3.0 V
Turn-off Delay Time
td(off)
RG = 10
Fall Time
tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T.
RG
PG.
VGS
0
τ
τ = 1 µs
Duty Cycle 1%
RL
VDD
VGS
VGS
Wave Form
10%
0
VGS 90%
ID 90%
ID
Wave Form
0 10%
td(on)
ID
tr td(off)
90%
10%
tf
ton toff
2SK3503
MIN. TYP. MAX. UNIT
1.0 µA
±3.0 µA
0.5 0.8 1.1
V
20 mS
20 50
7.0 15
5.0 12
10 pF
13 pF
3.0 pF
15 ns
70 ns
100 ns
110 ns
2 Data Sheet D15395EJ2V0DS


Part Number 2SK3503
Description N-Channel MOSFET
Maker NEC
PDF Download

2SK3503 Datasheet PDF






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