MOS FIELD EFFECT TRANSISTOR
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
The 2SK3503 is an N-channel vertical MOS FET. Because it can be
www.DataSheet4Ud.rcivoemn by a voltage as low as 1.5 V and it is not necessary to consider
a drive current, this FET is ideal as an actuator for low-current portable
systems such as headphone stereos and video cameras.
• Automatic mounting supported
• Gate can be driven by a 1.5 V power source
• Because of its high input impedance, there’s no need to
consider a drive current
• Since bias resistance can be omitted, the number of
components required can be reduced
PACKAGE DRAWING (Unit: mm)
1.6 ± 0.1
0 to 0.1
0.75 ± 0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
Gate to Source Voltage (VDS = 0 V)
Drain Current (DC) (Tc = 25°C)
Drain Current (pulse) Note1
Total Power Dissipation (TC = 25°C) Note2
Tstg –55 to +150
Notes 1. PW ≤ 10 µs, Duty Cycle ≤ 1%
2. Mounted on ceramic substrate of 3.0 cm2 × 0.64 mm
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When
this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated
voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D15395EJ2V0DS00 (2nd edition)
Date Published November 2004 NS CP(K)
Printed in Japan
The mark shows major revised points.