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2SK660 Datasheet, NEC

2SK660 transistor equivalent, n-channel silicon junction field effect transistor.

2SK660 Avg. rating / M : 1.0 rating-13

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2SK660 Datasheet

Features and benefits


* Compact package
* High forward transfer admittance | yfs | = 1200 µS TYP. (VDS = 5 V, ID = 0 µA)
* Low capacitance Ciss = 4.5 pF (VDS = 5 V, VGS = 0 V, f = .

Application

of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of ea.

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