Datasheet4U Logo Datasheet4U.com

NE24200 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NE24200 Description

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32400, NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility.

NE24200 Features

* Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP. , Ga = 11.0 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.25 µm
* Gate Width : Wg = 200 µm ORDERING INFORMATION PART NUMBER NE32400 NE24200 Standard (Grade D) Grade C and B (B is special order) QUALITY GRADE APPL

📥 Download Datasheet

Preview of NE24200 PDF
datasheet Preview Page 2 datasheet Preview Page 3

Datasheet Details

Part number
NE24200
Manufacturer
NEC
File Size
85.88 KB
Datasheet
NE24200_NEC.pdf
Description
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

📁 Related Datasheet

  • NE24283B - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (California Eastern)
  • NE2001-VA20 - Near edge thermal printhead (8 dots / mm) (Rohm)
  • NE2001-VA20A - Near edge thermal printhead (8 dots / mm) (Rohm)
  • NE2002-VA10A - Near edge thermal printhead (8 dots / mm) (Rohm)
  • NE2004-VA10A - Near edge thin film thermal printhead (8 dots / mm) (Rohm)
  • NE202930 - Silicon NPN Epitaxial High Frequency Transistor (Renesas)
  • NE21935 - NPN SILICON HI FREQUNCY TRANSISTOR (Advanced)
  • NE22100 - (NE22120 / NE22100) NPN Medium Power / UHF-VHF Transistor (NEC Electronics)

📌 All Tags

BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP NEC
NEC NE24200-like datasheet