NE24200 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Product Overview

NEC

NE24200 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP by NEC - Datasheet Preview — Datasheet preview – NE24200

Datasheet Details

Part number	NE24200
Manufacturer	NEC
File Size	85.88 KB
Description	C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Datasheet	NE24200 Datasheet
Additional preview pages of the NE24200 datasheet.

Product details

Description

NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons.

Features

Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP. , Ga = 11.0 dB TYP. at f = 12 GHz.
Gate Length : Lg = 0.25 µm.
Gate Width : Wg = 200 µm.

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Published: May 12, 2005 |