NE24200 chip equivalent, c to ka band super low noise amplifier n-channel hj-fet chip.
* Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
* Gate Length : Lg = 0.25 µm
* Gate Width : Wg = 200 µm
ORD.
FEATURES
* Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
* G.
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for commercial systems,.
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