NE24200 Description
NE32400 and NE24200 are Hetero Junction FET chip that utilizes the hetero junction between Si-doped AlGaAs and undoped InGaAs to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for mercial systems, industrial and space applications.
NE24200 Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.6 dB TYP., Ga = 11.0 dB TYP. at f = 12 GHz
- Gate Length : Lg = 0.25 µm
- Gate Width : Wg = 200 µm