NE3210S01 Datasheet - NEC

X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. at f = 12 GHz

* Gate Length: Lg ≤ 0.20 µm

* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE3210S01-T1 NE3210S01-T1B Supplying Form Tape & reel 1 000 pcs./reel Tape & reel

NE3210S01

NEC

62.71 KB

X to ku band super low noise amplifer n-channel hj-fet.

📁 Related Datasheet

NE3210S01 HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)

NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)

NE321000 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (CEL)

NE32400 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)

NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-SL C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-T1 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32484A-T1A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

NE32500 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP (NEC)

NE32584 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (NEC)

TAGS

NE3210S01 BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET NEC

Image Gallery