Datasheet4U Logo Datasheet4U.com

NE321000 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

Description

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.

Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz.
  • Gate Length: Lg ≤ 0.20 µm.
  • Gate Width : Wg = 160 µm.

📥 Download Datasheet

Datasheet preview – NE321000

Datasheet Details

Part number NE321000
Manufacturer NEC
File Size 48.78 KB
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
Datasheet download datasheet NE321000 Datasheet
Additional preview pages of the NE321000 datasheet.

📁 Similar Datasheet

  • NE321000 - ULTRA LOW NOISE PSEUDOMORPHIC HJ FET (CEL)
  • NE3210S01 - HETERO JUNCTION FIELD EFFECT TRANSISTOR (CEL)
  • NE3002-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)
  • NE3004-VA10A - Near edge thermal printhead (300 dots / inch) (Rohm)
  • NE33200 - SUPER LOW NOISE HJ FET (California Eastern)
  • NE350184C - HETERO JUNCTION FIELD EFFECT TRANSISTOR K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
  • NE3503M04 - C TO Ku BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER (California Eastern Labs)
  • NE3505M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
  • NE3508M04 - HETERO JUNCTION FIELD EFFECT TRANSISITOR (California Eastern Labs)
  • NE3509M04 - L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET (CEL)
Other Datasheets by NEC
  • NE3210S01 - X to Ku BAND SUPER LOW NOISE AMPLIFER N-CHANNEL HJ-FET
  • NE32400 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
  • NE32484A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
  • NE32484A-SL - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
  • NE32484A-T1 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
  • NE32484A-T1A - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
  • NE32500 - C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
  • NE32584 - C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Full PDF Text Transcription

Click to expand full text
DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz • Gate Length: Lg ≤ 0.20 µm • Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE321000 Standard (Grade D) Quality Grade Remark To order evaluation samples, please contact your local NEC sales office.
Published: |