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NE321000 Datasheet C To Ka Band Super Low Noise Amplifier N-channel Hj-fet Chip

Manufacturer: NEC (now Renesas Electronics)

Overview: DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET.

General Description

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications.

Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz.
  • Gate Length: Lg ≤ 0.20 µm.
  • Gate Width : Wg = 160 µm.

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