NE321000 datasheet, chip equivalent, NEC

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NE321000 Features and benefits

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm ORDER.

NE321000 Application

FEATURES
* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
* Ga.

NE321000 Description

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another commercial systems, industrial and space applications. FEATURES.

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