NE321000
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems, industrial and space applications.
FEATURES
- Super Low Noise Figure & High Associated Gain NF = 0.35 d B TYP. Ga = 13.5 d B TYP. @ f = 12 GHz
- Gate Length: Lg ≤ 0.20 µm
- Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number NE321000 Standard (Grade D) Quality Grade
Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order: NE321000)
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Gate Current Total Power Dissipation Channel Temperature Storage Temperature Symbol VDS VGS ID IG Ptot
Note
Ratings 4.0
- 3.0 IDSS 100 200 175
- 65 to +175
Unit V V m A
µA m W °C °C
Tch Tstg
Note Chip mounted on an Alumina heatsink (size: 3 × 3 × 0.6 t)
The information...
