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NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

NE321000 Description

DATA SHEET HETERO JUNCTION FIELDEFFECT TRANSISTOR NE321000 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP .
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

NE321000 Features

* Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
* Gate Length: Lg ≤ 0.20 µm
* Gate Width : Wg = 160 µm ORDERING INFORMATION (PLAN) Part Number NE321000 Standard (Grade D) Quality Grade Remark To order evaluation samples, plea

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Datasheet Details

Part number
NE321000
Manufacturer
NEC
File Size
48.78 KB
Datasheet
NE321000_NEC.pdf
Description
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP

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BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP NEC
NEC NE321000-like datasheet