Datasheet Summary
DATA SHEET
HETERO JUNCTION FIELDEFFECT TRANSISTOR
C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
DESCRIPTION
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems, industrial and space applications.
Features
- Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
- Gate Length: Lg ≤ 0.20 µm
- Gate Width : Wg = 160 µm
ORDERING INFORMATION (PLAN)
Part Number NE321000 Standard (Grade D) Quality Grade
Remark To order evaluation samples, please contact your local NEC sales...
