NE321000 Description
The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems, industrial and space applications.
NE321000 Key Features
- Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
- Gate Length: Lg ≤ 0.20 µm
- Gate Width : Wg = 160 µm