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NE321000 Datasheet

Manufacturer: NEC (now Renesas Electronics)
NE321000 datasheet preview

Datasheet Details

Part number NE321000
Datasheet NE321000_NEC.pdf
File Size 48.78 KB
Manufacturer NEC (now Renesas Electronics)
Description C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP
NE321000 page 2 NE321000 page 3

NE321000 Overview

The NE321000 is Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and associated gain make it suitable for DBS and another mercial systems, industrial and space applications.

NE321000 Key Features

  • Super Low Noise Figure & High Associated Gain NF = 0.35 dB TYP. Ga = 13.5 dB TYP. @ f = 12 GHz
  • Gate Length: Lg ≤ 0.20 µm
  • Gate Width : Wg = 160 µm

NE321000 from other manufacturers

See all manufacturers

Brand Logo Part Number Description Other Manufacturers
CEL Logo NE321000 ULTRA LOW NOISE PSEUDOMORPHIC HJ FET CEL
NEC (now Renesas Electronics) logo - Manufacturer

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