NE425S01 Datasheet C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

Manufacturer: NEC (now Renesas Electronics)

Download the NE425S01 datasheet PDF. This datasheet also includes the NE4-25S variant, as both parts are published together in a single manufacturer document.

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NE425S01 c to ku band super low noise amplifier n-channel hj-fet by NEC (now Renesas Electronics) - Datasheet Preview — Note: The manufacturer provides a single datasheet file (NE4-25S-01.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	NE425S01
Manufacturer	NEC (now Renesas Electronics)
File Size	57.50 KB
Description	C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET
Datasheet	NE425S01 Datasheet

General Description

The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons.

Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems.

PACKAGE DIMENSIONS (Unit: mm) 2.0 ±0.2

Overview

DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL.

Key Features

Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP. , Ga = 12.0 dB TYP. at f = 12 GHz.
Gate Length : Lg ≤ 0.20 µm.
Gate Width : Wg = 200 µm 2. 1 0 ±0 .2 0.5 TYP.

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