* Super Low Noise Figure & High Associated Gain NF = 0.60 dB TYP., Ga = 12.0 dB TYP. at f = 12 GHz
* Gate Length : Lg ≤ 0.20 µm
* Gate Width : Wg = 200 µm 2..

The NE425S01 is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent low noise and high associated gain make it suitable for DBS and another commercial systems. PACKAGE DIMENSIONS (Unit: mm) 2.0 ±0.

NE4210M01

NE4210S01

NE42484A

NE429M01

NE41137

NE416

NE434S01

NE434S01-T1

NE434S01-T1B

NE4558

NE46100

NE46134

NE46134-T1