NE461M02 Key Features
- NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)
- HIGH OUTPUT POWER AT 1 dB PRESSION: .. 27 dBm TYP at 1 GHz
- HIGH IP3: 37 dBm TYP at 1 GHz
- NE461M02
- Part: NE461M02
- Manufacturer: NEC (official site)
- Size: 71.00 KB
Related NEC Datasheets
| Part Number | Description |
|---|---|
| NE46100 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE46134 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE46134-T1 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE416 | NPN MEDIUM POWER UHF-VHF TRANSISTOR |
| NE4210M01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
NE461M02 Description
The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. The NE461M02 is an excellent choice for low noise amplifiers in the...