The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion.
| Part number | NE461M02 |
|---|---|
| Manufacturer | NEC (now Renesas Electronics) |
| File Size | 71.00 KB |
| Description | NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER |
| Datasheet |
 NE461M02 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| NE46234 | NPN SILICON RF TRANSISTOR | CEL |
| NE41137 | N-Channel GaAs Dual Gate MES FET | California Eastern Laboratories |
| NE4210S01 | X to Ku BAND SUPER LOW NOISE AMPLIFIER | CEL |
| NE4558 | Dual general-purpose operational amplifier | Philips |
| Part Number | Description |
|---|---|
| NE46100 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE46134 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE46134-T1 | NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR |
| NE416 | NPN MEDIUM POWER UHF-VHF TRANSISTOR |
| NE4210M01 | C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
