NE46134-T1 Datasheet | NEC

NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR Features - HIGH DYNAMIC RANGE - LOW IM DISTORTION: -40 d Bc Output Power, POUT (d Bm) 30.0 28.0 NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 m A 12.5 V 10 V 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 5 10 15 20 25 5V - HIGH OUTPUT POWER : 27.5 d Bm at TYP - LOW NOISE: 1.5 d B TYP at 500 MHz - LOW COST DESCRIPTION NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding bination of high gain and low intermodulation distortion, as well as low noise figure. The NE461 series offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and direct nitride passivation of the surface of the chip. Devices are available in a low cost surface mount package (SOT-89) as well as in chip form. Input Power, PIN (d Bm) ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS f T NFMIN GL |S21E|2 h FE ICBO IEBO P1d B IM3 RTH (J-C) RTH (J-A) PARAMETERS AND CONDITIONS Gain Bandwidth Product at VCE = 10 V, IC = 100 m A Minimum Noise Figure3 at VCE = 10 V, IC = 50 m A, 500 MHz VCE = 10 V, IC = 50 m A, 1 GHz Linear Gain, VCE = 12.5 V, IC = 100 m A, 2.0 GHz VCE = 12.5 V, IC = 100 m A, 1.0 GHz Insertion Power Gain at 10 V, 50 m A, f = 1.0 GHz DC Current Gain2 at VCE = 10 V, IC = 50 m A Collector Cutoff Current at VCB = 20 V, IE = 0 m A . Emitter Cutoff Current at VEB = 2 V, IC = 0 m A Output Power at 1 d B pression, VCE = 12.5 V, IC = 100 m A, 2.0 GHz VCE = 12.5 V, IC = 100 m A, 1.0 GHz Intermodulation Distortion, 10 V, 100 m A, F1 = 1.0 GHz, F2 = 0.99 GHz, Total POUT = 20 d Bm Thermal Resistance (Junction to Case) Thermal Resistance (Junction to Ambient) µA µA d Bm d Bm d Bc °C/W °C/W 27.0 27.5 -40.0 30 312.5 -40.0 32.5 UNITS GHz d B d B d B d B d B 40 MIN NE46100 00 (CHIP) TYP MAX MIN 5.5 1.5 2.0 9.0 8.0 10.0 200 5.0...