NE461M02
NE461M02 is NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER manufactured by NEC.
NPN EPITAXIAL SILICON TRANSISTOR HIGH FREQUENCY LOW DISTORTION AMPLIFIER
Features
HIGH COLLECTOR CURRENT: 250 mA MAX
- NEW HIGH GAIN POWER MINI-MOLD PACKAGE (SOT-89 TYPE)
- HIGH OUTPUT POWER AT 1 dB PRESSION: .. 27 dBm TYP at 1 GHz
- HIGH IP3: 37 dBm TYP at 1 GHz
- NE461M02
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE M02
BOTTOM VIEW
4.5±0.1 1.6±0.2
1.5±0.1
DESCRIPTION
The NE461M02 is an NPN silicon epitaxial bipolar transistor designed for medium power applications requiring high dynamic range and low intermodulation distortion. This device offers excellent performance and reliability at low cost through NEC's titanium, platinum, gold metallization system and...
