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NE46100 - NECs NPN MEDIUM POWER MICROWAVE TRANSISTOR

General Description

NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range.

This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure.

Key Features

  • HIGH.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC's NPN MEDIUM POWER MICROWAVE TRANSISTOR FEATURES • HIGH DYNAMIC RANGE • LOW IM DISTORTION: -40 dBc Output Power, POUT (dBm) 30.0 28.0 NE46100 NE46134 NE46134 TYPICAL OUTPUT POWER vs. INPUT POWER f = 1.0 GHz, IC = 100 mA 12.5 V 10 V 26.0 24.0 22.0 20.0 18.0 16.0 14.0 12.0 5 10 15 20 25 5V • HIGH OUTPUT POWER : 27.5 dBm at TYP • LOW NOISE: 1.5 dB TYP at 500 MHz • LOW COST DESCRIPTION NEC's NE461 series of NPN silicon epitaxial bipolar transistors is designed for medium power applications requiring high dynamic range. This device exhibits an outstanding combination of high gain and low intermodulation distortion, as well as low noise figure.