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NE721S01 - GENERAL PURPOSE L TO X-BAND GaAs MESFET

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NEC

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NE721S01 GENERAL PURPOSE L TO X-BAND GaAs MESFET by NEC - Datasheet Preview — Datasheet preview – NE721S01

Datasheet Details

Part number	NE721S01
Manufacturer	NEC
File Size	203.02 KB
Description	GENERAL PURPOSE L TO X-BAND GaAs MESFET
Datasheet	NE721S01 Datasheet
Additional preview pages of the NE721S01 datasheet.

Product details

Description

The NE721S01 is a low cost 0.8 µm recessed gate GaAs MESFET, suitable for both amplifier and oscillator applications.

Features

HIGH POWER GAIN: 7 dB TYP at 12 GHz.
HIGH OUTPUT POWER: 15 dBm TYP at 12 GHz.
LG = 0.8 µm, WG = 330 µm.
LOW PHASE NOISE: -110 dBc/Hz TYP at 100 KHz offset at f = 12 GHz.
LOW COST.

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Published: Aug 11, 2006 |