* Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A)
* Low input capacitance Ciss .

ORDERING INFORMATION PART NUMBER NP50P06SDG-E1-AY Note NP50P06SDG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tap.

The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP50P06SDG-E1-AY Note NP50P06SDG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-fr.

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