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NP50P04KDG

Manufacturer: NEC (now Renesas Electronics)
NP50P04KDG datasheet preview

Datasheet Details

Part number NP50P04KDG
Datasheet NP50P04KDG_NEC.pdf
File Size 201.24 KB
Manufacturer NEC (now Renesas Electronics)
Description MOS FIELD EFFECT TRANSISTOR
NP50P04KDG page 2 NP50P04KDG page 3

NP50P04KDG Overview

The NP50P04KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P04KDG-E1-AY NP50P04KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.).

NP50P04KDG Key Features

  • Super low on-state resistance RDS(on)1 = 10 mΩ MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 15 mΩ MAX. (VGS = -4.5 V, ID =
  • Low input capacitance Ciss = 5100 pF TYP. (TO-263)

NP50P04SLG from other manufacturers

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Brand Logo Part Number Description Other Manufacturers
Renesas Logo NP50P04SLG P-Channel Power MOSFET Renesas
NEC (now Renesas Electronics) logo - Manufacturer

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