NP50P06SDG Overview
Description
The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = -4.5 V, ID = -25 A)
- Low input capacitance Ciss = 5000 pF TYP. (TO-252) <R>
