Full PDF Text Transcription for NP50P06SDG (Reference)
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NP50P06SDG. For precise diagrams, and layout, please refer to the original PDF.
DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06SDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high c...
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P50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP50P06SDG-E1-AY Note NP50P06SDG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) FEATURES • Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5000 pF TYP.
NP50P06SDG Datasheet
