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NP50P06SDG - MOS FIELD EFFECT TRANSISTOR

Description

The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 25 A).
  • Low input capacitance Ciss = 5000 pF TYP. (TO-252).

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Datasheet preview – NP50P06SDG

Datasheet Details

Part number NP50P06SDG
Manufacturer NEC
File Size 235.80 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP50P06SDG Datasheet
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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06SDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06SDG is P-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION PART NUMBER NP50P06SDG-E1-AY Note NP50P06SDG-E2-AY Note LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note Pb-free (This product does not contain Pb in external electrode.) PACKAGE TO-252 (MP-3ZK) FEATURES • Super low on-state resistance RDS(on)1 = 16.5 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23.0 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5000 pF TYP.
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