NP50P03YDG
NP50P03YDG is MOS FIELD EFFECT TRANSISTOR manufactured by Renesas.
MOS FIELD EFFECT TRANSISTOR
Preliminary Data Sheet
R07DS0019EJ0200 Rev.2.00
Mar 16, 2011
Description
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
- Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS =
- 10 V, ID =
- 25 A)
- Low Ciss: Ciss = 2300 p F TYP. (VDS =
- 25 V, VGS = 0 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
Ordering Information
Part No. NP50P03YDG -E1-AY ∗1 NP50P03YDG -E2-AY ∗1
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.)
Package 8-pin HSON, Taping (E1 type) 8-pin HSON, Taping (E2 type)
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