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NP50P03YDG - MOS FIELD EFFECT TRANSISTOR

Description

The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Features

  • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 25 A).
  • Low Ciss: Ciss = 2300 pF TYP. (VDS =.
  • 25 V, VGS = 0 V).
  • Designed for automotive.

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Datasheet preview – NP50P03YDG

Datasheet Details

Part number NP50P03YDG
Manufacturer Renesas
File Size 224.06 KB
Description MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet NP50P03YDG Datasheet
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Full PDF Text Transcription

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NP50P03YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0019EJ0200 Rev.2.00 Mar 16, 2011 Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP50P03YDG -E1-AY ∗1 NP50P03YDG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
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