Full PDF Text Transcription for NP50P03YDG (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
NP50P03YDG. For precise diagrams, and layout, please refer to the original PDF.
NP50P03YDG MOS FIELD EFFECT TRANSISTOR Preliminary Data Sheet R07DS0019EJ0200 Rev.2.00 Mar 16, 2011 Description The NP50P03YDG is P-channel MOS Field Effect Transistor de...
View more extracted text
Description The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = −10 V, ID = −25 A) • Low Ciss: Ciss = 2300 pF TYP. (VDS = −25 V, VGS = 0 V) • Designed for automotive application and AEC-Q101 qualified • Small size package 8-pin HSON Ordering Information Part No. NP50P03YDG -E1-AY ∗1 NP50P03YDG -E2-AY ∗1 LEAD PLATING Pure Sn (Tin) PACKING Tape 2500 p/reel Note: ∗1. Pb-free (This product does not contain Pb in the external electrode.
NP50P03YDG Datasheet
