NP50P03YDG Overview
Description
The NP50P03YDG is P-channel MOS Field Effect Transistor designed for high current switching applications.
Key Features
- Low on-state resistance ⎯ RDS(on) = 8.4 mΩ MAX. (VGS = -10 V, ID = -25 A)
- Low Ciss: Ciss = 2300 pF TYP. (VDS = -25 V, VGS = 0 V)
- Designed for automotive application and AEC-Q101 qualified
- Small size package 8-pin HSON
