Datasheet4U Logo Datasheet4U.com

NP50P06KDG - MOSFET

General Description

The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications.

Key Features

  • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS =.
  • 10 V, ID =.
  • 25 A) RDS(on)2 = 23 mΩ MAX. (VGS =.
  • 4.5 V, ID =.
  • 25 A).
  • Low input capacitance Ciss = 5000 pF TYP. (TO-263).

📥 Download Datasheet

Full PDF Text Transcription for NP50P06KDG (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NP50P06KDG. For precise diagrams, and layout, please refer to the original PDF.

www.DataSheet4U.com DATA SHEET MOS FIELD EFFECT TRANSISTOR NP50P06KDG SWITCHING P-CHANNEL POWER MOSFET DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor...

View more extracted text
ET DESCRIPTION The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. <R> ORDERING INFORMATION PART NUMBER NP50P06KDG-E1-AY NP50P06KDG-E2-AY Note Note LEAD PLATING Pure Sn (Tin) PACKING Tape 800 p/reel PACKAGE TO-263 (MP-25ZK) Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = −10 V, ID = −25 A) RDS(on)2 = 23 mΩ MAX. (VGS = −4.5 V, ID = −25 A) • Low input capacitance Ciss = 5000 pF TYP.