NP50P06KDG Key Features
- Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = -10 V, ID = -25 A) RDS(on)2 = 23 mΩ MAX. (VGS = -4.5 V, ID =
- Low input capacitance Ciss = 5000 pF TYP. (TO-263)
- Part: NP50P06KDG
- Description: MOSFET
- Manufacturer: NEC
- Size: 204.69 KB
Other NP50P06KDG Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
Renesas |
NP50P06KDG | P-channel Power MOSFET |
|
Renesas |
NP50P06SDG | P-channel Power MOSFET |