| Part Number | NP50P06KDG Datasheet |
|---|---|
| Manufacturer | NEC |
| Overview |
The NP50P06KDG is P-channel MOS Field Effect Transistor designed for high current switching applications. * Super low on-state resistance RDS(on)1 = 17 mΩ MAX. (VGS = *10 V, ID = *25 A) RDS(on)2 = 23 mΩ MAX. (VGS = *4.5 V, ID = *25 A) * Low input capacitance Ciss = 5000 pF TYP. (TO-263) ABSOLUTE MAXIMUM RATINGS (TA = 25°C) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Cur. |
NP50P06KDG Datasheet and Specifications PDF
The NP50P06KDG is a MOSFET.
Key Specifications
| Package | TO-263 |
|---|---|
| Mount Type | Surface Mount |
| Pins | 3 |
| Height | 4.65 mm |
| Length | 10 mm |
| Width | 9 mm |
| Max Operating Temp | 175 °C |
| Min Operating Temp | -55 °C |
| Part Number | NP50P06KDG Datasheet |
|---|---|
| Description | P-channel Power MOSFET |
| Manufacturer | Renesas |
| Overview |
This product is P-channel MOS Field Effect Transistor designed for high current switching applications.
Features
Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(.
* Super low on-state resistance : RDS(on) = 17 m Max. ( VGS = -10 V, ID = -25 A ) RDS(on) = 23 m Max. ( VGS = -4.5 V, ID = -25 A ) * Low input capacitance : Ciss = 5000 pF Typ. * Designed for automotive application and AEC-Q101 qualified. * Pb-free (This product does not contain Pb in the external. |