NP82N06PLG fet equivalent, switching n-channel power mos fet.
* Super low on-state resistance RDS(on)1 = 6.7 mΩ MAX. (VGS = 10 V, ID = 41 A) RDS(on)2 = 8.5 mΩ MAX. (VGS = 5 V, ID = 41 A)
* Low input capacitance Ciss = 5700 p.
ORDERING INFORMATION
PART NUMBER NP82N06PLG-E1-AY NP82N06PLG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape.
The NP82N06PLG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER NP82N06PLG-E1-AY NP82N06PLG-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 800 p/reel
PACKAGE TO-2.
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