* Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS = −4.5 V, ID = −6.5 A) RDS(on)3 = 20 mΩ MAX. (VGS = −4.0 V, ID = .

of notebook computers and Li-ion battery protection circuit. FEATURES
* Low on-state resistance RDS(on)1 = 9 mΩ MAX.

The µ PA2711GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. FEATURES
* Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS = −10 V, ID = −6.5 A) RD.

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