* Low on-state resistance RDS(on)1 = 9 mΩ MAX. (VGS =
* 10 V, ID =
* 6.5 A) RDS(on)2 = 15 mΩ MAX. (VGS =
* 4.5 V, ID =
* 6.5 A) RDS(on)3 = 20 mΩ MAX. (VGS =
* 4.0 V, ID =
* 6.5 A)
* Low Ciss: Ciss = 2450 pF TYP.
* Small and surface mo
UPA2711GR Datasheet (149.55 KB)
UPA2711GR
NEC
149.55 KB
Switching n- and p-channel power mos fet.
DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA2711GR SWITCHING P-CHANNEL POWER MOS FET PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, .
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