* Low on-state resistance RDS(on)1 = 105 mΩ MAX. (VGS = 10 V, ID = 2.0 A) RDS(on)2 = 150 mΩ MAX. (VGS = 4.0 V, ID = 2.0 A)
* Low Ciss: Ciss = 260 pF TYP.
* Bu.

PACKAGE DRAWING (Unit: mm) 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4..

The µ PA2756GR is Dual N-channel MOS Field Effect Transistor designed for switching applications. PACKAGE DRAWING (Unit: mm) 8 5 1 : Source 1 2 : Gate 1 7, 8: Drain 1 3 : Source 2 4 : Gate 2 5, 6: Drain 2 6.0 ±0.3 4.4 +0.10
  –0.05 FE.

UPA2750GR

UPA2751GR

UPA2752GR

UPA2753GR

UPA2754GR

uPA2755AGR

UPA2755GR

uPA2757GR

UPA2700GR

UPA2700TP

UPA2701GR

UPA2701TP

UPA2702GR