* Built a Schottky Barrier Diode
* Low on-state resistance RDS(on)1 = 7.6 mΩ TYP. (VGS = 10 V, ID = 7 A) RDS(on)2 = 11.3 mΩ TYP. (VGS = 4.5 V, ID = 7 A) RDS(on)3 .

of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of.

The µPA2781GR is N-channel Power MOSFET, which built a Schottky Barrier Diode inside. This product is designed for synchronous DC/DC converter application. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8: Drain FEATURES
* Bu.

UPA2780GR

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